All MOSFET. CS5N65A4 Datasheet

 

CS5N65A4 Datasheet and Replacement


   Type Designator: CS5N65A4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-252
 

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CS5N65A4 Datasheet (PDF)

 ..1. Size:837K  wuxi china
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CS5N65A4

Silicon N-Channel Power MOSFET R CS5N65 A4 General Description VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.1. Size:424K  wuxi china
 cs5n65a8h.pdf pdf_icon

CS5N65A4

Silicon N-Channel Power MOSFET R CS5N65 A8H General Description VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.2. Size:417K  wuxi china
 cs5n65a7h.pdf pdf_icon

CS5N65A4

Silicon N-Channel Power MOSFET R CS5N65 A7H General Description VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.3. Size:837K  wuxi china
 cs5n65a3.pdf pdf_icon

CS5N65A4

Silicon N-Channel Power MOSFET R CS5N65 A3 General Description VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

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Datasheet: CS5M3710 , CS5M4905 , CS5M5210 , CS5N50 , CS5N5210 , CS5N60D , CS5N60F , CS5N65A3 , IRF9540 , CS5N65A7H , CS5N65A8H , CS5N65FA9H , CS5N70A4 , CS5N70FA9 , CS5N90 , CS5N90ARH-G , CS5N90FA9H .

History: HM2319A

Keywords - CS5N65A4 MOSFET datasheet

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