All MOSFET. CS5N70A4 Datasheet

 

CS5N70A4 Datasheet and Replacement


   Type Designator: CS5N70A4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-252
 
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CS5N70A4 Datasheet (PDF)

 ..1. Size:838K  wuxi china
 cs5n70a4.pdf pdf_icon

CS5N70A4

Silicon N-Channel Power MOSFET R CS5N70 A4 General Description VDSS 700 V CS5N70 A4,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.1. Size:829K  crhj
 cs5n70f a9.pdf pdf_icon

CS5N70A4

Silicon N-Channel Power MOSFET R CS5N70F A9 General Description VDSS 700 V CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 32 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:838K  crhj
 cs5n70 a4.pdf pdf_icon

CS5N70A4

Silicon N-Channel Power MOSFET R CS5N70 A4 General Description VDSS 700 V CS5N70 A4,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.3. Size:829K  wuxi china
 cs5n70fa9.pdf pdf_icon

CS5N70A4

Silicon N-Channel Power MOSFET R CS5N70F A9 General Description VDSS 700 V CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 32 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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Datasheet: CS5N5210 , CS5N60D , CS5N60F , CS5N65A3 , CS5N65A4 , CS5N65A7H , CS5N65A8H , CS5N65FA9H , K4145 , CS5N70FA9 , CS5N90 , CS5N90ARH-G , CS5N90FA9H , CS5NB90 , CS5NJ5305 , CS5NJ540 , CS5NJ540A .

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