CS5N70A4 PDF and Equivalents Search

 

CS5N70A4 Specs and Replacement

Type Designator: CS5N70A4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 69 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-252

CS5N70A4 substitution

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CS5N70A4 datasheet

 ..1. Size:838K  wuxi china
cs5n70a4.pdf pdf_icon

CS5N70A4

Silicon N-Channel Power MOSFET R CS5N70 A4 General Description VDSS 700 V CS5N70 A4,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

 8.1. Size:829K  crhj
cs5n70f a9.pdf pdf_icon

CS5N70A4

Silicon N-Channel Power MOSFET R CS5N70F A9 General Description VDSS 700 V CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 32 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 8.2. Size:838K  crhj
cs5n70 a4.pdf pdf_icon

CS5N70A4

Silicon N-Channel Power MOSFET R CS5N70 A4 General Description VDSS 700 V CS5N70 A4,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

 8.3. Size:829K  wuxi china
cs5n70fa9.pdf pdf_icon

CS5N70A4

Silicon N-Channel Power MOSFET R CS5N70F A9 General Description VDSS 700 V CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 32 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

Detailed specifications: CS5N5210 , CS5N60D , CS5N60F , CS5N65A3 , CS5N65A4 , CS5N65A7H , CS5N65A8H , CS5N65FA9H , 2N7002 , CS5N70FA9 , CS5N90 , CS5N90ARH-G , CS5N90FA9H , CS5NB90 , CS5NJ5305 , CS5NJ540 , CS5NJ540A .

Keywords - CS5N70A4 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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