CS640A8H MOSFET. Datasheet pdf. Equivalent
Type Designator: CS640A8H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220AB
CS640A8H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS640A8H Datasheet (PDF)
cs640a8h.pdf
Silicon N-Channel Power MOSFET R CS640 A8H General Description VDSS 200 V CS640 A8H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs640a0h.pdf
Silicon N-Channel Power MOSFET R CS640 A0H General Description VDSS 200 V CS640 A0H, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 156 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
jcs640s jcs640c jcs640f.pdf
N N- CHANNEL MOSFET R JCS640 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
jcs640vh jcs640rh jcs640ch jcs640fh.pdf
N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
jcs640vh jcs640rh jcs640ch jcs640fh jcs640sh.pdf
N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
cs640 a0h.pdf
Silicon N-Channel Power MOSFET R CS640 A0H General Description VDSS 200 V CS640 A0H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs640 a8h.pdf
Silicon N-Channel Power MOSFET R CS640 A8H General Description VDSS 200 V CS640 A8H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs640f a9h.pdf
Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs640.pdf
CS640 N PD TC=25 125 W 1.0 W/ ID VGS=10V,TC=25 18 A ID VGS=10V,TC=100 11 A IDM 72 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.0 /W RthJA 62.5 /W BVDSS VGS=0V,ID=0.25mA 200 V RDS on VGS=10
cs640f.pdf
IRFS640(CS640F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs640fa9h.pdf
Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 55 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF640N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
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