Справочник MOSFET. CS640A8H

 

CS640A8H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS640A8H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 156 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 180 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для CS640A8H

 

 

CS640A8H Datasheet (PDF)

 ..1. Size:782K  wuxi china
 cs640a8h.pdf

CS640A8H CS640A8H

Silicon N-Channel Power MOSFET R CS640 A8H General Description VDSS 200 V CS640 A8H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.1. Size:836K  wuxi china
 cs640a0h.pdf

CS640A8H CS640A8H

Silicon N-Channel Power MOSFET R CS640 A0H General Description VDSS 200 V CS640 A0H, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 156 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 9.1. Size:1439K  jilin sino
 jcs640s jcs640c jcs640f.pdf

CS640A8H CS640A8H

N N- CHANNEL MOSFET R JCS640 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 9.2. Size:1405K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh.pdf

CS640A8H CS640A8H

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 9.3. Size:1803K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh jcs640sh.pdf

CS640A8H CS640A8H

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 9.4. Size:716K  crhj
 cs640 a0h.pdf

CS640A8H CS640A8H

Silicon N-Channel Power MOSFET R CS640 A0H General Description VDSS 200 V CS640 A0H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 9.5. Size:719K  crhj
 cs640 a8h.pdf

CS640A8H CS640A8H

Silicon N-Channel Power MOSFET R CS640 A8H General Description VDSS 200 V CS640 A8H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.6. Size:708K  crhj
 cs640f a9h.pdf

CS640A8H CS640A8H

Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 9.7. Size:125K  china
 cs640.pdf

CS640A8H

CS640 N PD TC=25 125 W 1.0 W/ ID VGS=10V,TC=25 18 A ID VGS=10V,TC=100 11 A IDM 72 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.0 /W RthJA 62.5 /W BVDSS VGS=0V,ID=0.25mA 200 V RDS on VGS=10

 9.8. Size:197K  lzg
 cs640f.pdf

CS640A8H CS640A8H

IRFS640(CS640F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

 9.9. Size:828K  wuxi china
 cs640fa9h.pdf

CS640A8H CS640A8H

Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 55 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SI7172DP

 

 
Back to Top