CS640F Specs and Replacement

Type Designator: CS640F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220F

CS640F substitution

- MOSFET ⓘ Cross-Reference Search

 

CS640F datasheet

 ..1. Size:708K  crhj
 cs640f a9h.pdf pdf_icon

CS640F

Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced ID 18 A PD(TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 ..2. Size:197K  lzg
 cs640f.pdf pdf_icon

CS640F

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 0.1. Size:1439K  jilin sino
 jcs640s jcs640c jcs640f.pdf pdf_icon

CS640F

N N- CHANNEL MOSFET R JCS640 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒

 0.2. Size:1405K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh.pdf pdf_icon

CS640F

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Detailed specifications: CS630A8H, CS630D, CS630F, CS630FA9H, CS634F, CS640, CS640A0H, CS640A8H, IRFP250, CS640FA9H, CS64N90, CS64N90B, CS64N90F, CS65N20-30, CS6660, CS6661, CS6766

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.