CS640F
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS640F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 43
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 180
nS
Cossⓘ -
Output Capacitance: 225
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
TO-220F
CS640F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS640F
Datasheet (PDF)
..1. Size:708K crhj
cs640f a9h.pdf 
Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
..2. Size:197K lzg
cs640f.pdf
IRFS640(CS640F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
0.1. Size:1439K jilin sino
jcs640s jcs640c jcs640f.pdf
N N- CHANNEL MOSFET R JCS640 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
0.2. Size:1405K jilin sino
jcs640vh jcs640rh jcs640ch jcs640fh.pdf
N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
0.3. Size:1803K jilin sino
jcs640vh jcs640rh jcs640ch jcs640fh jcs640sh.pdf
N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
0.4. Size:828K wuxi china
cs640fa9h.pdf
Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 55 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
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