All MOSFET. CS64N90F Datasheet

 

CS64N90F Datasheet and Replacement


   Type Designator: CS64N90F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 92 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 442 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00745 Ohm
   Package: TO-220F
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CS64N90F Datasheet (PDF)

 ..1. Size:896K  thinkisemi
 cs64n90f cs64n90 cs64n90b.pdf pdf_icon

CS64N90F

CS64N90 PbCS64N90Pb Free Plating Product85V,92A N-Channel Trench Process Power MOSFETGeneral Description CS64N90(TO-220 HeatSink)CS64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS GFea

 9.1. Size:603K  cass
 cs64n12 csn64n12.pdf pdf_icon

CS64N90F

CS64N12\ CSN64N12 N-Channel Trench Power MOSFET General Description The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=120A@ VGS=10V; RDS(ON)

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History: FIR8N65FG | APT10021JFLL | SSW65R190S2 | SM4186T9RL | NCE30P12BS | WMM07N65C4 | NP180N04TUJ

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