NDS8435A Datasheet and Replacement

March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesSO-8 P-Channel enhancement mode power field effect-7.9 A, -30 V. RDS(ON) = 0.023 @ VGS = -10 Vtransistors are produced using Fairchild's proprietary, high cellRDS(ON) = 0.035 @ VGS = -4.5V.density, DMOS technology. This very high density process isHigh density cell

NDS8435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

June 1996 NDS8434Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.5A, -20V. RDS(ON) = 0.035 @ VGS = -4.5Vtransistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = -2.7V.density, DMOS technology. This very high density process isHigh density cell design fo

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDS8434Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical