CS6N60FA9TY Specs and Replacement

Type Designator: CS6N60FA9TY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 74 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: TO-220F

CS6N60FA9TY substitution

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CS6N60FA9TY datasheet

 ..1. Size:413K  wuxi china
 cs6n60fa9ty.pdf pdf_icon

CS6N60FA9TY

Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 5.1. Size:302K  wuxi china
 cs6n60fa9h.pdf pdf_icon

CS6N60FA9TY

Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 7.1. Size:302K  crhj
 cs6n60f a9h.pdf pdf_icon

CS6N60FA9TY

Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 7.2. Size:413K  crhj
 cs6n60f a9ty.pdf pdf_icon

CS6N60FA9TY

Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

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Detailed specifications: CS6796, CS6798, CS6849, CS6849U, CS6N60A3TY, CS6N60A4D, CS6N60A4TY, CS6N60F, STP65NF06, CS6N70A3D-G, CS6N70A4D-G, CS6N70FA9D, CS6N70FB9D, CS6N80A8, CS6N80ARH, CS6N80FA9, CS6N90ARH-G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.