CS6N60FA9TY Datasheet and Replacement
Type Designator: CS6N60FA9TY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 74 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO-220F
CS6N60FA9TY substitution
CS6N60FA9TY Datasheet (PDF)
cs6n60fa9ty.pdf

Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs6n60fa9h.pdf

Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs6n60f a9h.pdf

Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs6n60f a9ty.pdf

Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Datasheet: CS6796 , CS6798 , CS6849 , CS6849U , CS6N60A3TY , CS6N60A4D , CS6N60A4TY , CS6N60F , IRFZ48N , CS6N70A3D-G , CS6N70A4D-G , CS6N70FA9D , CS6N70FB9D , CS6N80A8 , CS6N80ARH , CS6N80FA9 , CS6N90ARH-G .
History: GP1T072A060B | AFN04N60T220FT | AT7N65S | AFP1073 | TK22E10N1 | SWB062R08E8T | IPA60R199CP
Keywords - CS6N60FA9TY MOSFET datasheet
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History: GP1T072A060B | AFN04N60T220FT | AT7N65S | AFP1073 | TK22E10N1 | SWB062R08E8T | IPA60R199CP



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