All MOSFET. CS6N60FA9TY Datasheet

 

CS6N60FA9TY Datasheet and Replacement


   Type Designator: CS6N60FA9TY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO-220F
 

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CS6N60FA9TY Datasheet (PDF)

 ..1. Size:413K  wuxi china
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CS6N60FA9TY

Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 5.1. Size:302K  wuxi china
cs6n60fa9h.pdf pdf_icon

CS6N60FA9TY

Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.1. Size:302K  crhj
cs6n60f a9h.pdf pdf_icon

CS6N60FA9TY

Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:413K  crhj
cs6n60f a9ty.pdf pdf_icon

CS6N60FA9TY

Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Datasheet: CS6796 , CS6798 , CS6849 , CS6849U , CS6N60A3TY , CS6N60A4D , CS6N60A4TY , CS6N60F , IRFZ48N , CS6N70A3D-G , CS6N70A4D-G , CS6N70FA9D , CS6N70FB9D , CS6N80A8 , CS6N80ARH , CS6N80FA9 , CS6N90ARH-G .

History: GP1T072A060B | AFN04N60T220FT | AT7N65S | AFP1073 | TK22E10N1 | SWB062R08E8T | IPA60R199CP

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