CS6N80A8 MOSFET. Datasheet pdf. Equivalent
Type Designator: CS6N80A8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 35 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm
Package: TO-220AB
CS6N80A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS6N80A8 Datasheet (PDF)
1.1. cs6n80a8.pdf 
Size:848K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS6N80 A8 General Description： VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
3.1. cs6n80arh.pdf Size:675K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS6N80 ARH General Description： VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
4.1. cs6n80fa9.pdf Size:847K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS6N80F A9 General Description： VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
4.2. cs6n80f a9.pdf Size:847K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N80F A9 General Description： VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
4.3. cs6n80 a0h.pdf Size:736K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N80 A0H General Description： VDSS 800 V CS6N80 A0H, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
4.4. cs6n80 arh.pdf Size:675K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N80 ARH General Description： VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
4.5. cs6n80 a8.pdf Size:848K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N80 A8 General Description： VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
