CS6N80A8 MOSFET Datasheet: N-Ch, 800V, 6A. Full specification with pinout and replacement list

CS6N80A8 Specs and Replacement

   Type Designator: CS6N80A8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-220AB

CS6N80A8 substitution

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CS6N80A8 datasheet

..1. Size:848K wuxi china
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Silicon N-Channel Power MOSFET R CS6N80 A8 General Description VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25 ) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒

7.1. Size:355K wuxi china
cs6n80arr-g.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS6N80 ARR-G General Description VDSS 800 V CS6N80 ARR-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

7.2. Size:675K wuxi china
cs6n80arh.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS6N80 ARH General Description VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

8.1. Size:847K crhj
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Silicon N-Channel Power MOSFET R CS6N80F A9 General Description VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25 ) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒