All MOSFET. CS6N80FA9 Datasheet

 

CS6N80FA9 Datasheet and Replacement


   Type Designator: CS6N80FA9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-220F
 

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CS6N80FA9 Datasheet (PDF)

 ..1. Size:847K  wuxi china
 cs6n80fa9.pdf pdf_icon

CS6N80FA9

Silicon N-Channel Power MOSFET R CS6N80F A9 General Description VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:847K  crhj
 cs6n80f a9.pdf pdf_icon

CS6N80FA9

Silicon N-Channel Power MOSFET R CS6N80F A9 General Description VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:675K  crhj
 cs6n80 arh.pdf pdf_icon

CS6N80FA9

Silicon N-Channel Power MOSFET R CS6N80 ARH General Description VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:736K  crhj
 cs6n80 a0h.pdf pdf_icon

CS6N80FA9

Silicon N-Channel Power MOSFET R CS6N80 A0H General Description VDSS 800 V CS6N80 A0H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

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Datasheet: CS6N60F , CS6N60FA9TY , CS6N70A3D-G , CS6N70A4D-G , CS6N70FA9D , CS6N70FB9D , CS6N80A8 , CS6N80ARH , MMD60R360PRH , CS6N90ARH-G , CS6N90FA9H , CS7000 , CS7002 , CS7002K , CS7218 , CS7225 , CS7233 .

History: BUZ63 | BUZ110S

Keywords - CS6N80FA9 MOSFET datasheet

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