All MOSFET. CS6N80FA9 Datasheet

 

CS6N80FA9 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS6N80FA9

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 35 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

Package: TO-220F

CS6N80FA9 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS6N80FA9 Datasheet (PDF)

1.1. cs6n80fa9.pdf Size:847K _update_mosfet

CS6N80FA9
CS6N80FA9

Silicon N-Channel Power MOSFET R ○ CS6N80F A9 General Description: VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.1. cs6n80f a9.pdf Size:847K _crhj

CS6N80FA9
CS6N80FA9

Silicon N-Channel Power MOSFET R ○ CS6N80F A9 General Description: VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 4.1. cs6n80arh.pdf Size:675K _update_mosfet

CS6N80FA9
CS6N80FA9

Silicon N-Channel Power MOSFET R ○ CS6N80 ARH General Description: VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

4.2. cs6n80a8.pdf Size:848K _update_mosfet

CS6N80FA9
CS6N80FA9

Silicon N-Channel Power MOSFET R ○ CS6N80 A8 General Description: VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 4.3. cs6n80 arh.pdf Size:675K _crhj

CS6N80FA9
CS6N80FA9

Silicon N-Channel Power MOSFET R ○ CS6N80 ARH General Description: VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

4.4. cs6n80 a0h.pdf Size:736K _crhj

CS6N80FA9
CS6N80FA9

Silicon N-Channel Power MOSFET R ○ CS6N80 A0H General Description: VDSS 800 V CS6N80 A0H, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 4.5. cs6n80 a8.pdf Size:848K _crhj

CS6N80FA9
CS6N80FA9

Silicon N-Channel Power MOSFET R ○ CS6N80 A8 General Description: VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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