All MOSFET. CS740FA9H Datasheet

 

CS740FA9H MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS740FA9H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-220F

 CS740FA9H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS740FA9H Datasheet (PDF)

 ..1. Size:337K  wuxi china
 cs740fa9h.pdf

CS740FA9H CS740FA9H

Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.1. Size:1642K  1
 jcs740vc jcs740rc jcs740sc jcs740bc jcs740cc jcs740fc.pdf

CS740FA9H CS740FA9H

N RN-CHANNEL MOSFETJCS740C MAIN CHARACTERISTICS Package 10 A ID 400 V VDSS Rdson 0.54 @Vgs=10V19.7nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 8.2. Size:2382K  jilin sino
 jcs740vc jcs740rc jcs740bc jcs740sc jcs740cc jcs740fc.pdf

CS740FA9H CS740FA9H

N RN-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson-max(@Vgs=10V) 0.54 Qg 19.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 8.3. Size:337K  crhj
 cs740f a9h.pdf

CS740FA9H CS740FA9H

Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.4. Size:292K  lzg
 cs740f.pdf

CS740FA9H CS740FA9H

IRFS740(CS740F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

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