CS740FA9H Specs and Replacement

Type Designator: CS740FA9H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-220F

CS740FA9H substitution

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CS740FA9H datasheet

 ..1. Size:337K  wuxi china
cs740fa9h.pdf pdf_icon

CS740FA9H

Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 8.1. Size:1642K  1
jcs740vc jcs740rc jcs740sc jcs740bc jcs740cc jcs740fc.pdf pdf_icon

CS740FA9H

N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package 10 A ID 400 V VDSS Rdson 0.54 @Vgs=10V 19.7nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

 8.3. Size:337K  crhj
cs740f a9h.pdf pdf_icon

CS740FA9H

Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

Detailed specifications: CS730A3RD, CS730A4RD, CS730A8RD, CS730F, CS7316, CS740, CS740A8H, CS740F, IRF540N, CS740S, CS7416, CS7455, CS7456, CS75N08, CS75N75, CS75N75B8H, CS7807

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