All MOSFET. CS75N08 Datasheet

 

CS75N08 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS75N08

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 131 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 68 nS

Drain-Source Capacitance (Cd): 680 pF

Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm

Package: TO-220

CS75N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS75N08 Datasheet (PDF)

1.1. cs75n08.pdf Size:216K _update_mosfet

CS75N08
CS75N08

BR75N08(CS75N08) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃

5.1. cs75n75b8h.pdf Size:843K _update_mosfet

CS75N08
CS75N08

Silicon N-Channel Power MOSFET R ○ CS75N75 B8H General Description: VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.2. cs75n75.pdf Size:63K _update_mosfet

CS75N08

CS75N75型N沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 220 W 线性降低系数 1.4 W/℃ ID (VGS=10V,TC=25℃) 75 A 极 ID (VGS=10V,TC=100℃) 56 A 限 IDM 300 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.8 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 75 V RDS on) VGS=10V,ID=48A 0.0125 0.015 Ω (

 5.3. cs75n75 b8h.pdf Size:843K _crhj

CS75N08
CS75N08

Silicon N-Channel Power MOSFET R ○ CS75N75 B8H General Description: VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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