CS75N08 MOSFET Datasheet: N-Ch, 75V, 75A. Full specification with pinout and replacement list

CS75N08 Specs and Replacement

   Type Designator: CS75N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 131 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-220

CS75N08 substitution

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CS75N08 datasheet

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BR75N08(CS75N08) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ... See More ⇒

9.1. Size:843K crhj
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Silicon N-Channel Power MOSFET R CS75N75 B8H General Description VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

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CS75N75 N PD TC=25 220 W 1.4 W/ ID VGS=10V,TC=25 75 A ID VGS=10V,TC=100 56 A IDM 300 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.8 /W BVDSS VGS=0V,ID=0.25mA 75 V RDS on VGS=10V,ID=48A 0.0125 0.015 ... See More ⇒

9.3. Size:843K wuxi china
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