All MOSFET. CS7N65A0D Datasheet

 

CS7N65A0D Datasheet and Replacement


   Type Designator: CS7N65A0D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-263
 

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CS7N65A0D Datasheet (PDF)

 ..1. Size:760K  wuxi china
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CS7N65A0D

Silicon N-Channel Power MOSFET R CS7N65 A0D General Description VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.1. Size:759K  wuxi china
 cs7n65a4tdy.pdf pdf_icon

CS7N65A0D

Silicon N-Channel Power MOSFET R CS7N65 A4TDY General Description VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.2. Size:644K  wuxi china
 cs7n65a3tdy.pdf pdf_icon

CS7N65A0D

Silicon N-Channel Power MOSFET R CS7N65 A3TDY General Description VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.3. Size:279K  wuxi china
 cs7n65a3r.pdf pdf_icon

CS7N65A0D

Silicon N-Channel Power MOSFET R CS7N65 A3R General Description VDSS 650 V CS7N65 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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Datasheet: CS75N75B8H , CS7807 , CS7N1404 , CS7N60A7HD , CS7N60A8HD , CS7N60F , CS7N60FA9HD , CS7N60FA9HDY , IRFB4110 , CS7N65A3TDY , CS7N65A4TDY , CS7N65FA9TDY , CS7N70ARD , CS7N80A8 , CS7N80F , CS7NJZ44V , CS7Y1905C .

History: KP727B | SIHFBC30AL

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