NDS9407 Datasheet PDF and Equivalents Search

 ..1. Size:141K  fairchild semi
 nds9407.pdf

May 2002 NDS9407 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.0 A, 60 V. RDS(ON) = 150 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 240 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide range ... See More ⇒

 ..2. Size:665K  onsemi
 nds9407.pdf

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 ..3. Size:918K  cn vbsemi
 nds9407.pdf

NDS9407 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 100 % Rg and UIS tested RDS(on) ( ) at VGS = -10 V 0.050 RDS(on) ( ) at VGS = -4.5 V 0.060 ID (A) per leg -8 S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETE... See More ⇒

 8.1. Size:197K  fairchild semi
 nds9400a.pdf

February 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low RDS(ON). density, DMOS technology. This very high density process is es... See More ⇒

 8.2. Size:52K  fairchild semi
 nds9405.pdf

February 1996 N NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -4.3A, -20V. RDS(ON) = 0.10 @ VGS = -10V transistors are produced using National's proprietary, high cell High density cell design for extremely low RDS(ON) density, DMOS technology. This very high density process is High... See More ⇒

 9.1. Size:77K  fairchild semi
 nds9410a.pdf

February 1996 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 7.3A, 30V. RDS(ON) = 0.028 @ VGS = 10V. transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.042 @ VGS = 4.5V. density, DMOS technology. This very high density process is High density cell design ... See More ⇒

 9.2. Size:64K  fairchild semi
 nds9430a.pdf

December 1997 NDS9430A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -5.3A, -20V. RDS(ON) = 0.05 @ VGS = -10V transistors are produced using National's proprietary, high cell RDS(ON) = 0.065 @ VGS = -6V RDS(ON) = 0.09 @ VGS = -4.5V. density, DMOS technology. This very high density proc... See More ⇒

 9.3. Size:166K  fairchild semi
 nds9435a.pdf

January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5.3 A, 30 V RDS(ON) = 50 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 80 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang... See More ⇒

 9.4. Size:137K  fairchild semi
 nds9430.pdf

May 2002 NDS9430 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5.3 A, 30 V RDS(ON) = 60 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) =100 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide range of ... See More ⇒

 9.5. Size:1573K  cn vbsemi
 nds9410a.pdf

NDS9410A www.VBsemi.tw N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 3.8 RoHS Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 15 Ruggedness Qgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 6 Compliant to RoHS... See More ⇒

 9.6. Size:1395K  cn vbsemi
 nds9435a.pdf

NDS9435A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top ... See More ⇒