All MOSFET. CS8N25A4H Datasheet

 

CS8N25A4H Datasheet and Replacement


   Type Designator: CS8N25A4H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-252
 

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CS8N25A4H Datasheet (PDF)

 ..1. Size:637K  wuxi china
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CS8N25A4H

Silicon N-Channel Power MOSFET R CS8N25 A4H General Description VDSS 250 V CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:635K  wuxi china
 cs8n25a8h.pdf pdf_icon

CS8N25A4H

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.1. Size:613K  crhj
 cs8n25f a9.pdf pdf_icon

CS8N25A4H

Silicon N-Channel Power MOSFET R CS8N25F A9 General Description VDSS 250 V CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:637K  crhj
 cs8n25 a8h.pdf pdf_icon

CS8N25A4H

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

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Datasheet: CS830FA9RD , CS840 , CS840A8D , CS840A8H , CS840F , CS840FA9D , CS840FA9H , CS8473 , TK10A60D , CS8N25A8H , CS8N60A8H , CS8N60F , CS8N60FA9H , CS8N65A0H , CS8N65A8H , CS8N65FA9H , CS8N80FA9D .

History: FS70KMJ-06F

Keywords - CS8N25A4H MOSFET datasheet

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