CS8N25A4H. Аналоги и основные параметры

Наименование производителя: CS8N25A4H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 80 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm

Тип корпуса: TO-252

Аналог (замена) для CS8N25A4H

- подборⓘ MOSFET транзистора по параметрам

 

CS8N25A4H даташит

 ..1. Size:637K  wuxi china
 cs8n25a4h.pdf pdf_icon

CS8N25A4H

Silicon N-Channel Power MOSFET R CS8N25 A4H General Description VDSS 250 V CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:635K  wuxi china
 cs8n25a8h.pdf pdf_icon

CS8N25A4H

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.1. Size:613K  crhj
 cs8n25f a9.pdf pdf_icon

CS8N25A4H

Silicon N-Channel Power MOSFET R CS8N25F A9 General Description VDSS 250 V CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:637K  crhj
 cs8n25 a8h.pdf pdf_icon

CS8N25A4H

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... CS830FA9RD, CS840, CS840A8D, CS840A8H, CS840F, CS840FA9D, CS840FA9H, CS8473, 13N50, CS8N25A8H, CS8N60A8H, CS8N60F, CS8N60FA9H, CS8N65A0H, CS8N65A8H, CS8N65FA9H, CS8N80FA9D