All MOSFET. CS9945BEY Datasheet

 

CS9945BEY Datasheet and Replacement


   Type Designator: CS9945BEY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: SO-8
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CS9945BEY Datasheet (PDF)

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CS9945BEY

CS9945BEY N PD TC=25 4 W ID VGS=10V,TC=25 6 A IDM 21.5 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 112 /W BVDSS VGS=0V,ID=0.25mA 60 V RDS on VGS=10V,ID=3.4A 0.064 VGS th VDS=VGS,ID=0.25mA 1.5 2.5 V gfs VD

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History: BSZ035N03LSG

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