CSB4710 Datasheet and Replacement
Type Designator: CSB4710
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO-258
CSB4710 substitution
CSB4710 Datasheet (PDF)
csb4710.pdf

CSB4710 N PD TC=25 200 W 1.4 W/ ID VGS=10V,TC=25 75 A ID VGS=10V,TC=100 53 A IDM 300 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.74 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=45A 0.02
Datasheet: CS9532 , CS9540 , CS9620 , CS9640 , CS9945BEY , CS9N90ANHD , CS9N90FA9D , CSB4110 , 2N60 , CSBF30 , CSE110 , CSE130 , CSE220 , CSE230 , CSE9130 , CSE9210 , CSF230 .
History: MPSY65M650 | SI7404DN | IXTA120N075T2 | SI7415DN | MPSW65M065 | SI7413DN | CS9640
Keywords - CSB4710 MOSFET datasheet
CSB4710 cross reference
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History: MPSY65M650 | SI7404DN | IXTA120N075T2 | SI7415DN | MPSW65M065 | SI7413DN | CS9640



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