All MOSFET. CSB4710 Datasheet

 

CSB4710 Datasheet and Replacement


   Type Designator: CSB4710
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-258
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CSB4710 Datasheet (PDF)

 ..1. Size:125K  china
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CSB4710

CSB4710 N PD TC=25 200 W 1.4 W/ ID VGS=10V,TC=25 75 A ID VGS=10V,TC=100 53 A IDM 300 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.74 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=45A 0.02

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: LSF65R570GT | CSD16342Q5A

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