All MOSFET. CSE9130 Datasheet

 

CSE9130 Datasheet and Replacement


   Type Designator: CSE9130
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-257
 

 CSE9130 substitution

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CSE9130 Datasheet (PDF)

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CSE9130

CSE9130P PD TC=25 22 W 0.17 W/ID VGS=-10V,TC=25 -6.1 AID VGS=-10V,TC=100 -3.8 AIDM -24 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 5.8 /W BVDSS VGS=0V,ID=-1.0mA -100 VRDS on VGS=-10V,ID=-3.8A 0.30

Datasheet: CS9N90FA9D , CSB4110 , CSB4710 , CSBF30 , CSE110 , CSE130 , CSE220 , CSE230 , STF13NM60N , CSE9210 , CSF230 , CSF9024 , CSI460 , CSI4N60 , CSL2803 , CSLR024 , CSM064 .

History: TK13E25D | SMOS44N50D3 | MMF60R360PTH | 8N60L-TA3-T | QM3020P | AP4420GJ | AFN5908W

Keywords - CSE9130 MOSFET datasheet

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