CSE9130 Specs and Replacement

Type Designator: CSE9130

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-257

CSE9130 substitution

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CSE9130 datasheet

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 cse9130.pdf pdf_icon

CSE9130

CSE9130 P PD TC=25 22 W 0.17 W/ ID VGS=-10V,TC=25 -6.1 A ID VGS=-10V,TC=100 -3.8 A IDM -24 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 5.8 /W BVDSS VGS=0V,ID=-1.0mA -100 V RDS on VGS=-10V,ID=-3.8A 0.30 ... See More ⇒

Detailed specifications: CS9N90FA9D, CSB4110, CSB4710, CSBF30, CSE110, CSE130, CSE220, CSE230, STF13NM60N, CSE9210, CSF230, CSF9024, CSI460, CSI4N60, CSL2803, CSLR024, CSM064

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.