CSI460 Specs and Replacement

Type Designator: CSI460

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO-257

CSI460 substitution

- MOSFET ⓘ Cross-Reference Search

 

CSI460 datasheet

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csi460.pdf pdf_icon

CSI460

CSI460 N PD TC=25 300 W 2.4 W/ ID VGS=10V,TC=25 21 A ID VGS=10V,TC=100 13 A IDM 84 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W RthJA 30 /W BVDSS VGS=0V,ID=1.0 mA 500 V VGS=10V,ID=13A 0... See More ⇒

Detailed specifications: CSE110, CSE130, CSE220, CSE230, CSE9130, CSE9210, CSF230, CSF9024, P60NF06, CSI4N60, CSL2803, CSLR024, CSM064, CSM150, CSM260, CSM350, CSML0060

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.