All MOSFET. CSR3410 Datasheet

 

CSR3410 MOSFET. Datasheet pdf. Equivalent

Type Designator: CSR3410

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm

Package: SMD-1

CSR3410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CSR3410 Datasheet (PDF)

1.1. csr3410.pdf Size:112K _update_mosfet

CSR3410

CSR3410 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 110 W ID (VGS=10V,TC=25℃) 31 A 极 IDM 125 A 限 VGS ±20 V 值 Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 1.4 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 100 V RDS on) VGS=10V,ID=18A 0.034 0.039 Ω ( VGS th) VDS=VGS,ID=0.25mA 2.0 4.0 V ( 电

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