CSY140 MOSFET. Datasheet pdf. Equivalent
Type Designator: CSY140
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.092 Ohm
Package: TO-257
CSY140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSY140 Datasheet (PDF)
1.1. csy140.pdf 
Size:136K _update_mosfet
CSY140 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 50 W 线性降低系数 0.48 W/℃ ID （VGS=10V,TC=25℃） 18 A 极 ID （VGS=10V,TC=100℃） 22 A 限 IDM 88 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 2.1 ℃/W 性 BVDSS VGS=0V,ID=1.0mA 100 V RDS on） VGS=10V,ID=12A 0.092 Ω
Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .
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