All MOSFET. CSY140 Datasheet

 

CSY140 MOSFET. Datasheet pdf. Equivalent

Type Designator: CSY140

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.092 Ohm

Package: TO-257

CSY140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CSY140 Datasheet (PDF)

1.1. csy140.pdf Size:136K _update_mosfet

CSY140

CSY140 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 50 W 线性降低系数 0.48 W/℃ ID (VGS=10V,TC=25℃) 18 A 极 ID (VGS=10V,TC=100℃) 22 A 限 IDM 88 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 2.1 ℃/W 性 BVDSS VGS=0V,ID=1.0mA 100 V RDS on) VGS=10V,ID=12A 0.092 Ω

Datasheet: PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , IRF510 , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT , PHD82NQ03LT , PHD87N03LT , PHD96NQ03LT , PHD98N03LT , PHN210 .

 
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