CSD13202Q2 Datasheet and Replacement

CSD13202Q2www.ti.com SLPS313 SEPTEMBER 201312V N-Channel NexFET Power MOSFETsCheck for Samples: CSD13202Q21FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 12 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 5.1 nC Avalanche RatedQgd Gate Charge Gate to Drain 0.76 nCVGS = 2.5V 9.1 m Pb Free Terminal PlatingRDS(on) D

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13201W10SLPS306A MAY 2012 REVISED SEPTEMBER 2015CSD13201W10 N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Small Footprint (1 mm 1 mm)VDS Drain-to-Source Voltage 12 V Low Profile 0.62-mm HeightQg Gate Ch

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13383F4SLPS517 DECEMBER 2014CSD13383F4 12 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size)Qg Gate Charge Total (4.5 V) 2.0 n

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13381F4SLPS448D JULY 2013 REVISED MAY 2015CSD13381F4 12 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Low Threshold VoltageQg Gate Charge Total (4.5 V) 1060 pC

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13306WSLPS537 MARCH 2015CSD13306W 12 V N Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low on ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Small Footprint 1 1.5 mmQg Gate Charge Total (4.5 V) 8.6 nC Low

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13302WSLPS535 MARCH 2015CSD13302W 12 V N Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low On ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Small Footprint 1 mm 1 mmQg Gate Charge Total (4.5 V) 6.0 nC Low

CSD13303W1015www.ti.com SLPS298A MAY 2012 REVISED MAY 2012N-Channel NexFET Power MOSFETCheck for Samples: CSD13303W10151FEATURESPRODUCT SUMMARY Ultra Low on ResistanceTA = 25C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain to Source Voltage 12 V Small FootprintQg Gate Charge Total (4.5V) 3.9 nCQgd Gate Charge Gate to Drain

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD1306 (SAW)PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTERFormed SMD Package3 = COLLECTOR312MarkingCSD1306E=06ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO 30 VVCEOCollector Emitter Voltage 15

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSD13002 HIGH VOLTAGE SWITCHING TRANSISTORTO-92Plastic PackageFor Lead Free Parts, Devices Part # will be Perfixed with "T"BCEApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATING (Ta=25C )DES