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CSD19506KCS Specs and Replacement


   Type Designator: CSD19506KCS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 2260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO-220
 

 CSD19506KCS substitution

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CSD19506KCS Specs

 ..1. Size:414K  texas
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CSD19506KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19506KCS SLPS481B DECEMBER 2013 REVISED OCTOBER 2014 CSD19506KCS 80 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 80 V Avalanche Rated Qg Gate Charge Total... See More ⇒

 7.1. Size:787K  1
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CSD19506KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19505KCS SLPS480B JANUARY 2014 REVISED OCTOBER 2014 CSD19505KCS 80 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 80 V Avalanche Rated Qg Gate Charge Total ... See More ⇒

 7.2. Size:751K  texas
 csd19501kcs.pdf pdf_icon

CSD19506KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19501KCS SLPS478A JANUARY 2014 REVISED AUGUST 2014 CSD19501KCS 80-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 80 V Avalanche Rated Qg Gate Charge Total (... See More ⇒

 7.3. Size:758K  texas
 csd19505kcs.pdf pdf_icon

CSD19506KCS

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19505KCS SLPS480B JANUARY 2014 REVISED OCTOBER 2014 CSD19505KCS 80 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 80 V Avalanche Rated Qg Gate Charge Total ... See More ⇒

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Detailed specifications: CSD18537NQ5A , CSD18540Q5B , CSD18542KCS , CSD18563Q5A , CSD19501KCS , CSD19502Q5B , CSD19503KCS , CSD19505KCS , 50N06 , CSD19531KCS , CSD19531Q5A , CSD19532KTT , CSD19532Q5B , CSD19533KCS , CSD19533Q5A , CSD19534KCS , CSD19534Q5A .

Keywords - CSD19506KCS MOSFET specs

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