CSD19531Q5A
MOSFET. Datasheet pdf. Equivalent
Type Designator: CSD19531Q5A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.3
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 37
nC
trⓘ - Rise Time: 5.8
nS
Cossⓘ -
Output Capacitance: 560
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0064
Ohm
Package:
SON5X6
CSD19531Q5A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSD19531Q5A
Datasheet (PDF)
..1. Size:1281K texas
csd19531q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19531Q5ASLPS406B SEPTEMBER 2013 REVISED MAY 2014CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total
6.1. Size:398K texas
csd19531kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19531KCSSLPS407B SEPTEMBER 2013 REVISED JULY 2014CSD19531KCS 100-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total
7.1. Size:404K texas
csd19536kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19536KCSSLPS485B JANUARY 2014 REVISED OCTOBER 2014CSD19536KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tota
7.2. Size:504K texas
csd19537q3.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19537Q3SLPS549 AUGUST 2015CSD19537Q3 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 16 nC Pb-Free
7.3. Size:352K texas
csd19538q3a.pdf
Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD19538Q3ASLPS583A MAY 2016 REVISED MARCH 2017CSD19538Q3A 100-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low-Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 4
7.4. Size:685K texas
csd19533kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19533KCSSLPS482B DECEMBER 2013 REVISED JANUARY 2015CSD19533KCS, 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tot
7.5. Size:912K texas
csd19534q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19534Q5ASLPS483 MAY 2014CSD19534Q5A 100 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 17 nC Pb-Free
7.6. Size:876K texas
csd19536ktt.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19536KTTSLPS540A MARCH 2015 REVISED MAY 2015CSD19536KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 100 V Avalanche RatedQg Gate charge total (10 V
7.7. Size:320K texas
csd19534kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19534KCSSLPS530 JANUARY 2015CSD19534KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 16.4 nC Pb-
7.8. Size:875K texas
csd19535ktt.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19535KTTSLPS539A MARCH 2015 REVISED MAY 2015CSD19535KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V
7.9. Size:1312K texas
csd19533q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19533Q5ASLPS486A DECEMBER 2013 REVISED MAY 2014CSD19533Q5A 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (1
7.10. Size:1376K texas
csd19532q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19532Q5BSLPS414A DECEMBER 2013 REVISED JUNE 2014CSD19532Q5B 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V)
7.11. Size:367K texas
csd19532ktt.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19532KTTSLPS553 OCTOBER 2015CSD19532KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 44 nC Pb-Fr
7.12. Size:736K texas
csd19535kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19535KCSSLPS484B JANUARY 2014 REVISED OCTOBER 2014CSD19535KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tota
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