CSD23203W MOSFET Datasheet: P-Ch, 8V, 3A. Full specification with pinout and replacement list

CSD23203W Specs and Replacement

Type Designator: CSD23203W

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 391 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0194 Ohm

Package: DSBGA

CSD23203W substitution

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CSD23203W datasheet

..1. Size:1038K texas
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Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD23203W SLPS533 DECEMBER 2014 CSD23203W 8 V P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low RDS(on) VDS Drain-to-Source Voltage 8 V Small Footprint Qg Gate Charge Total ( 4.5 V) 4.9 nC Low Profile 0.62... See More ⇒

7.1. Size:141K texas
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CSD23201W10 www.ti.com SLPS209A AUGUST 2009 REVISED MAY 2010 P-Channel NexFET Power MOSFET Check for Samples CSD23201W10 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 12 V Small Footprint 1mm 1mm Qg Gate Charge Total (4.5V) 1.8 nC Low Profile 0.62mm Height Qgd Gate Charge Gate to Drain 0.26 nC Pb Free VGS = 1.5V 110... See More ⇒

7.2. Size:1051K texas
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Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD23202W10 SLPS506 AUGUST 2014 CSD23202W10 12-V P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Small Footprint 1 mm 1 mm VDS Drain-to-Source Voltage 12 V Low Profile 0.62-mm Height Qg Gate Charge Total ( 4.... See More ⇒

8.1. Size:1364K texas
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