All MOSFET. CSD25201W15 Datasheet

 

CSD25201W15 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CSD25201W15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.3 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: WLP1.5X1.5

 CSD25201W15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSD25201W15 Datasheet (PDF)

 ..1. Size:314K  texas
 csd25201w15.pdf

CSD25201W15 CSD25201W15

CSD25201W15www.ti.com SLPS269A JUNE 2010REVISED JULY 2011P-Channel NexFET Power MOSFETCheck for Samples: CSD25201W15PRODUCT SUMMARY1FEATURESVDS Drain to Drain Voltage 20 V Low ResistanceQg Gate Charge Total (4.5V) 4.3 nC Small Footprint 1.5-mm 1.5-mmQgd Gate Charge Gate to Drain 0.7 nC Gate ESD Protection 3kVVGS = 1.8V 52 m Pb F

 7.1. Size:985K  texas
 csd25202w15.pdf

CSD25201W15 CSD25201W15

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25202W15SLPS508A JUNE 2014 REVISED JULY 2014CSD25202W15 20-V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low-ResistanceTA = 25C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mmVDS Drain-to-Source Voltage 20 V Gate ESD Protection 3 kVQg Gate C

 8.1. Size:742K  texas
 csd25211w1015.pdf

CSD25201W15 CSD25201W15

CSD25211W1015www.ti.com SLPS296 FEBRUARY 2012P-Channel NexFET Power MOSFETCheck for Samples: CSD25211W10151FEATURESPRODUCT SUMMARY Ultra Low On ResistanceTA = 25C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain to Source Voltage -20 V Small Footprint 1.0mm x 1.5mmQg Gate Charge Total (-4.5V) 3.4 nCQgd Gate Charge Gate to Drain

 8.2. Size:1297K  texas
 csd25213w10.pdf

CSD25201W15 CSD25201W15

CSD25213W10www.ti.com SLPS443 JUNE 2013P-Channel NexFET Power MOSFETCheck for Samples: CSD25213W101FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 20 V Small Footprint 1mm 1mmQg Gate Charge Total (4.5V) 2.2 nC Low Profile 0.62mm HeightQgd Gate Charge Gate to Drain 0.14 nCVGS = 2.5V 54 m Pb FreeRDS(on) Drain to S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI7153DN | H06N60U

 

 
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