CSD75211W1723
MOSFET. Datasheet pdf. Equivalent
Type Designator: CSD75211W1723
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.5
nC
trⓘ - Rise Time: 4.1
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package: WLP1.7X2.3
CSD75211W1723
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSD75211W1723
Datasheet (PDF)
..1. Size:333K texas
csd75211w1723.pdf
CSD75211W1723www.ti.com SLPS250A MAY 2010REVISED AUGUST 2011Dual P-Channel NexFET Power MOSFETCheck for Samples: CSD75211W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage -20 V Dual P-Ch MOSFETsQg Gate Charge Total (-4.5V) 4.5 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.9 nC Small Footprint 1.7 mm 2.3 mmVGS = -1.8V 50 m
8.1. Size:1435K texas
csd75208w1015.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD75208W1015SLPS512 JULY 2014CSD75208W1015 Dual 20-V Common Source P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Dual P-Channel MOSFETsTA = 25C TYPICAL VALUE UNIT Common Source ConfigurationVDS Drain-to-Source Voltage 20 V Small Footprint 1 mm 1.5 mmQ
8.2. Size:207K texas
csd75205w1015.pdf
CSD75205W1015www.ti.com SLPS222B OCTOBER 2009 REVISED OCTOBER 2010P-Channel NexFET Power MOSFET1FEATURESPRODUCT SUMMARY Dual P-Ch MOSFETsVDS Drain to Source Voltage 20 V Common Source ConfigurationQg Gate Charge Total (-4.5V) 1.6 nC Small Footprint 1mm 1.5mmQgd Gate Charge Gate to Drain 0.4 nCVGS = 1.8V 145 m Gate-Source Voltage Clamp
8.3. Size:1324K texas
csd75207w15.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD75207W15SLPS418A JUNE 2013 REVISED JUNE 2014CSD75207W15 Dual P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Dual P-Channel MOSFETsTA = 25C TYPICAL VALUE UNIT Common Source ConfigurationVD1D2 Drain-to-Drain Voltage 20 V Small Footprint 1.5-mm 1.5-mm
8.4. Size:145K texas
csd75204w15.pdf
CSD75204W15www.ti.com SLPS221A OCTOBER 2009REVISED OCTOBER 2010Dual P-Channel NexFET Power MOSFETCheck for Samples: CSD75204W151FEATURESPRODUCT SUMMARY Dual P-Ch MOSFETsVD1D2 Drain to Drain Voltage 20 V Common Source ConfigurationQg Gate Charge Total (-4.5V) 2.8 nC Small Footprint 1.5-mm 1.5-mmQgd Gate Charge Gate to Drain 0.6 nC Gate-Source
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