All MOSFET. K2611B Datasheet

 

K2611B Datasheet and Replacement


   Type Designator: K2611B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-3PB
 

 K2611B substitution

   - MOSFET ⓘ Cross-Reference Search

 

K2611B Datasheet (PDF)

 ..1. Size:999K  winsemi
 k2611b.pdf pdf_icon

K2611B

K2611BK2611BK2611BK2611BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 11A,900V, R (Max1.10)@V =10VDS(on) GS Ultra-low Gate charge(Typical 72nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode powe

 9.1. Size:408K  toshiba
 2sk2611.pdf pdf_icon

K2611B

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.1 (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

 9.2. Size:694K  winsemi
 k2611sb.pdf pdf_icon

K2611B

K2611SBK2611SBK2611SBK2611SBSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,900V, R (Max1.35)@V =10VDS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode p

 9.3. Size:571K  winsemi
 k2611s.pdf pdf_icon

K2611B

K2611SK2611SK2611SK2611SSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,900V, R (Max1.35)@V =10VDS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power

SHOW MORE

Datasheet: CSD87350Q5D , CSD87351Q5D , CSD87352Q5D , CSD87353Q5D , CSD87501L , CSD88539ND , CSD9024 , K2611 , 7N60 , K2611S , K2611SB , K2698 , K2698B , K2837 , K2837B , KDB15N50 , KDB2532 .

History: APT4080BN | 25N10G-TM3-T

Keywords - K2611B MOSFET datasheet

 K2611B cross reference
 K2611B equivalent finder
 K2611B lookup
 K2611B substitution
 K2611B replacement

 

 
Back to Top

 


 
.