K2611S MOSFET Datasheet: N-Ch, 900V, 9A. Full specification with pinout and replacement list

K2611S Specs and Replacement

Type Designator: K2611S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 276 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm

Package: TO-247

K2611S substitution

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K2611S datasheet

..1. Size:571K winsemi
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K2611S K2611S K2611S K2611S Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 9A,900V, R (Max1.35 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode power... See More ⇒

0.1. Size:694K winsemi
k2611sb.pdf pdf_icon

K2611SB K2611SB K2611SB K2611SB Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 9A,900V, R (Max1.35 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode p... See More ⇒

9.1. Size:408K toshiba
2sk2611.pdf pdf_icon

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.1 (typ.) (ON) High forward transfer admittance Y 7.0 S (typ.) fs = Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V =... See More ⇒

9.2. Size:999K winsemi
k2611b.pdf pdf_icon

K2611B K2611B K2611B K2611B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 11A,900V, R (Max1.10 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 72nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode powe... See More ⇒