K2698 Specs and Replacement
Type Designator: K2698
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO-247
K2698 substitution
- MOSFET ⓘ Cross-Reference Search
K2698 datasheet
k2698.pdf
K2698 K2698 K2698 K2698 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Winse... See More ⇒
2sk2698.pdf
2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2698 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.35 (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10... See More ⇒
k2698b.pdf
K2698B K2698B K2698B K2698B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using W... See More ⇒
Detailed specifications: CSD87353Q5D, CSD87501L, CSD88539ND, CSD9024, K2611, K2611B, K2611S, K2611SB, IRF520, K2698B, K2837, K2837B, KDB15N50, KDB2532, KDB2552, KDB2570, KDB2572
Keywords - K2698 MOSFET specs
K2698 cross reference
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