KDB2552 PDF and Equivalents Search

 

KDB2552 Specs and Replacement

Type Designator: KDB2552

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO-263

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KDB2552 datasheet

 ..1. Size:51K  kexin
 kdb2552.pdf pdf_icon

KDB2552

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2552(FDB2552) Features TO-263 Unit mm rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A +0.2 4.57-0.2 +0.1 Qg(tot) = 39nC (Typ.), VGS = 10V 1.27-0.1 Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.1 0.1max 1.27-0.1 +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 3... See More ⇒

 9.1. Size:51K  kexin
 kdb2532.pdf pdf_icon

KDB2552

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2532(FDB2532) TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A 1.27-0.1 Qg(tot) = 82nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode +0.1 0.1max 1.27-0.1 UIS Capability (Single Pulse and Repetitive Pulse) +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 3... See More ⇒

 9.2. Size:50K  kexin
 kdb2570.pdf pdf_icon

KDB2552

SMD Type MOSFET 150V N-Channel PowerTrench MOSFET KDB2570(FDB2570) TO-263 Unit mm Features 22 A, 150 V. RDS(ON) =80 m @VGS =10 V +0.2 4.57-0.2 +0.1 1.27-0.1 RDS(ON) =90m @VGS =6V Low gate charge Fast switching speed +0.1 0.1max 1.27-0.1 High performance trench technology for extremely low RDS(ON) +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 ... See More ⇒

 9.3. Size:52K  kexin
 kdb2572.pdf pdf_icon

KDB2552

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2572(FDB2572) Features TO-263 Unit mm rDS(ON) = 45m (Typ.), VGS = 10V, ID =9A +0.2 4.57-0.2 +0.1 Qg(tot) = 26nC (Typ.), VGS = 10V 1.27-0.1 Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.1 0.1max 1.27-0.1 +0.1 0.81-0.1 2.54 1Gate +0.2 2Drain 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 3 ... See More ⇒

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Detailed specifications: K2611S , K2611SB , K2698 , K2698B , K2837 , K2837B , KDB15N50 , KDB2532 , P60NF06 , KDB2570 , KDB2572 , KDB2670 , KDB3632 , KDB3652 , KDB3672 , KDB3682 , KDB4020P .

Keywords - KDB2552 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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