All MOSFET. KDB2572 Datasheet

 

KDB2572 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KDB2572
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 29 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: TO-263

 KDB2572 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KDB2572 Datasheet (PDF)

 ..1. Size:52K  kexin
 kdb2572.pdf

KDB2572 KDB2572

SMD Type MOSFETN-Channel PowerTrench MOSFETKDB2572(FDB2572)FeaturesTO-263Unit: mmrDS(ON) = 45m (Typ.), VGS = 10V, ID =9A+0.24.57-0.2+0.1Qg(tot) = 26nC (Typ.), VGS = 10V1.27-0.1Low Miller ChargeLow QRR Body DiodeUIS Capability (Single Pulse and Repetitive Pulse)+0.10.1max1.27-0.1+0.10.81-0.12.54 1Gate+0.22Drain2.54-0.2 +0.1 +0.25.08-0.1 0.4-0.23

 8.1. Size:50K  kexin
 kdb2570.pdf

KDB2572 KDB2572

SMD Type MOSFET150V N-Channel PowerTrench MOSFETKDB2570(FDB2570)TO-263Unit: mmFeatures22 A, 150 V. RDS(ON) =80 m @VGS =10 V +0.24.57-0.2+0.11.27-0.1RDS(ON) =90m @VGS =6VLow gate chargeFast switching speed+0.10.1max1.27-0.1High performance trench technology for extremelylow RDS(ON)+0.10.81-0.12.54 1Gate+0.22Drain2.54-0.2 +0.1 +0.25.08-0.1 0.4-0.2

 9.1. Size:51K  kexin
 kdb2532.pdf

KDB2572 KDB2572

SMD Type MOSFETN-Channel PowerTrench MOSFETKDB2532(FDB2532)TO-263Unit: mmFeatures+0.24.57-0.2+0.1rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A 1.27-0.1Qg(tot) = 82nC (Typ.), VGS = 10VLow Miller ChargeLow QRR Body Diode+0.10.1max1.27-0.1UIS Capability (Single Pulse and Repetitive Pulse)+0.10.81-0.12.54 1Gate+0.22Drain2.54-0.2 +0.1 +0.25.08-0.1 0.4-0.23

 9.2. Size:51K  kexin
 kdb2552.pdf

KDB2572 KDB2572

SMD Type MOSFETN-Channel PowerTrench MOSFETKDB2552(FDB2552)FeaturesTO-263Unit: mmrDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A+0.24.57-0.2+0.1Qg(tot) = 39nC (Typ.), VGS = 10V 1.27-0.1Low Miller ChargeLow QRR Body DiodeUIS Capability (Single Pulse and Repetitive Pulse)+0.10.1max1.27-0.1+0.10.81-0.12.54 1Gate+0.22Drain2.54-0.2 +0.1 +0.25.08-0.1 0.4-0.23

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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