All MOSFET. KDD3680 Datasheet

 

KDD3680 Datasheet and Replacement


   Type Designator: KDD3680
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 176 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO-252
 

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KDD3680 Datasheet (PDF)

 ..1. Size:62K  kexin
 kdd3680.pdf pdf_icon

KDD3680

SMD Type ICSMD Type Transistors100V N-Channel Power Trench MOSFETKDD3680TO-252Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1+0.25.30-0.2 0.50+0.8-0.7Features25 A, 100 V. RDS(ON) = 46m @VGS =10 VRDS(ON) = 51m @VGS =6V0.127Low gate charge (38 nC typical)0.80+0.1 max-0.1Fast switching speedHigh performance trench technology for extremely low RDS(ON)1. Gate2.3 0.60+0

 9.1. Size:62K  kexin
 kdd3670.pdf pdf_icon

KDD3680

SMD Type ICSMD Type Transistors100V N-Channel PowerTrench MOSFETKDD3670TO-252Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1+0.25.30-0.2 0.50+0.8-0.7Features34 A, 100 V. RDS(ON) = 32m @VGS =10VRDS(ON) = 35m @VGS =6V0.127Low gate charge (57 nC typical)0.80+0.1 max-0.1Fast switching speedHigh performance trench technology for extremely low RDS(ON)1. Gate2.3 0.60+0.1

Datasheet: KDB3682 , KDB4020P , KDB5690 , KDB6030L , KDB7045L , KDC6020C , KDD2572 , KDD3670 , 2SK3918 , KDD6030L , KDR8702H , KDS2572 , KDS3512 , KDS3601 , KDS3912 , KDS4470 , KDS4501H .

History: AP80WN2K5I | IRFP341

Keywords - KDD3680 MOSFET datasheet

 KDD3680 cross reference
 KDD3680 equivalent finder
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