All MOSFET. KDS3512 Datasheet

 

KDS3512 Datasheet and Replacement


   Type Designator: KDS3512
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOP-8
 

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KDS3512 Datasheet (PDF)

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KDS3512

SMD Type ICSMD Type IC80V N-Channel PowerTrench MOSFETKDS3512Features4.0 A, 80 V. RDS(ON) = 70m @VGS =10 VRDS(ON) = 80m @VGS =6VLow gate charge (13 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage VDSS 8

Datasheet: KDB7045L , KDC6020C , KDD2572 , KDD3670 , KDD3680 , KDD6030L , KDR8702H , KDS2572 , AO3407 , KDS3601 , KDS3912 , KDS4470 , KDS4501H , KDS4559 , KDS4953 , KDS5670 , KDS6375 .

History: WMK80N04T1

Keywords - KDS3512 MOSFET datasheet

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