KDS3512 PDF and Equivalents Search

 

KDS3512 Specs and Replacement

Type Designator: KDS3512

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOP-8

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KDS3512 datasheet

 ..1. Size:62K  kexin
 kds3512.pdf pdf_icon

KDS3512

SMD Type IC SMD Type IC 80V N-Channel PowerTrench MOSFET KDS3512 Features 4.0 A, 80 V. RDS(ON) = 70m @VGS =10 V RDS(ON) = 80m @VGS =6V Low gate charge (13 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 8... See More ⇒

Detailed specifications: KDB7045L, KDC6020C, KDD2572, KDD3670, KDD3680, KDD6030L, KDR8702H, KDS2572, AO4407A, KDS3601, KDS3912, KDS4470, KDS4501H, KDS4559, KDS4953, KDS5670, KDS6375

Keywords - KDS3512 MOSFET specs

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