All MOSFET. KDS3512 Datasheet

 

KDS3512 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KDS3512
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOP-8

 KDS3512 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KDS3512 Datasheet (PDF)

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 kds3512.pdf

KDS3512 KDS3512

SMD Type ICSMD Type IC80V N-Channel PowerTrench MOSFETKDS3512Features4.0 A, 80 V. RDS(ON) = 70m @VGS =10 VRDS(ON) = 80m @VGS =6VLow gate charge (13 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage VDSS 8

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFL9110

 

 
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