KDS3601 Datasheet and Replacement
Type Designator: KDS3601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 3.7 nC
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: SOP-8
KDS3601 substitution
KDS3601 Datasheet (PDF)
kds3601.pdf

SMD Type ICSMD Type IC100V Dual N-Channel PowerTrench MOSFETKDS3601Features1.3 A, 100 V. RDS(ON) = 480m @VGS =10 VRDS(ON) = 530m @VGS =6VLow gate charge (3.7 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Volt
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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