All MOSFET. KDS3601 Datasheet

 

KDS3601 Datasheet and Replacement


   Type Designator: KDS3601
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: SOP-8
 

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KDS3601 Datasheet (PDF)

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KDS3601

SMD Type ICSMD Type IC100V Dual N-Channel PowerTrench MOSFETKDS3601Features1.3 A, 100 V. RDS(ON) = 480m @VGS =10 VRDS(ON) = 530m @VGS =6VLow gate charge (3.7 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Volt

Datasheet: KDC6020C , KDD2572 , KDD3670 , KDD3680 , KDD6030L , KDR8702H , KDS2572 , KDS3512 , AO4468 , KDS3912 , KDS4470 , KDS4501H , KDS4559 , KDS4953 , KDS5670 , KDS6375 , KDS6685 .

History: TK20A25D

Keywords - KDS3601 MOSFET datasheet

 KDS3601 cross reference
 KDS3601 equivalent finder
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