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KDS3601 Specs and Replacement

Type Designator: KDS3601

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: SOP-8

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KDS3601 datasheet

 ..1. Size:62K  kexin
 kds3601.pdf pdf_icon

KDS3601

SMD Type IC SMD Type IC 100V Dual N-Channel PowerTrench MOSFET KDS3601 Features 1.3 A, 100 V. RDS(ON) = 480m @VGS =10 V RDS(ON) = 530m @VGS =6V Low gate charge (3.7 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Volt... See More ⇒

Detailed specifications: KDC6020C, KDD2572, KDD3670, KDD3680, KDD6030L, KDR8702H, KDS2572, KDS3512, 60N06, KDS3912, KDS4470, KDS4501H, KDS4559, KDS4953, KDS5670, KDS6375, KDS6685

Keywords - KDS3601 MOSFET specs

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