KDS4470 MOSFET. Datasheet pdf. Equivalent
Type Designator: KDS4470
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 12.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 605 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP-8
KDS4470 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KDS4470 Datasheet (PDF)
..1. Size:62K kexin
kds4470.pdf
kds4470.pdf
SMD Type ICSMD Type IC40V N-Channel PowerTrench MOSFETKDS4470Features12.5 A, 40V. RDS(ON) =9m @VGS =10VLow gate charge (45 nC typical)High performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage VDSS 40 VGate to Source Voltage VGS +30/-20 VDrain
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
