All MOSFET. KDS4470 Datasheet

 

KDS4470 Datasheet and Replacement


   Type Designator: KDS4470
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 605 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP-8
 

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KDS4470 Datasheet (PDF)

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KDS4470

SMD Type ICSMD Type IC40V N-Channel PowerTrench MOSFETKDS4470Features12.5 A, 40V. RDS(ON) =9m @VGS =10VLow gate charge (45 nC typical)High performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage VDSS 40 VGate to Source Voltage VGS +30/-20 VDrain

Datasheet: KDD3670 , KDD3680 , KDD6030L , KDR8702H , KDS2572 , KDS3512 , KDS3601 , KDS3912 , IRFP064N , KDS4501H , KDS4559 , KDS4953 , KDS5670 , KDS6375 , KDS6685 , KDS6910 , KDS8333C .

History: IPB019N06L3 | FQPF30N06L

Keywords - KDS4470 MOSFET datasheet

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