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KDS4470 Specs and Replacement

Type Designator: KDS4470

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 605 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SOP-8

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KDS4470 datasheet

 ..1. Size:62K  kexin
 kds4470.pdf pdf_icon

KDS4470

SMD Type IC SMD Type IC 40V N-Channel PowerTrench MOSFET KDS4470 Features 12.5 A, 40V. RDS(ON) =9m @VGS =10V Low gate charge (45 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 40 V Gate to Source Voltage VGS +30/-20 V Drain ... See More ⇒

Detailed specifications: KDD3670, KDD3680, KDD6030L, KDR8702H, KDS2572, KDS3512, KDS3601, KDS3912, AO4468, KDS4501H, KDS4559, KDS4953, KDS5670, KDS6375, KDS6685, KDS6910, KDS8333C

Keywords - KDS4470 MOSFET specs

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