All MOSFET. KDS5670 Datasheet

 

KDS5670 Datasheet and Replacement


   Type Designator: KDS5670
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 685 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP-8
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KDS5670 Datasheet (PDF)

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KDS5670

SMD Type ICSMD Type IC60V N-Channel PowerTrenchTM MOSFETKDS5670Features10 A, 60 V. RDS(ON) = 0.014 @VGS =10 VRDS(ON) = 0.017 @VGS =6 VLow gate chargeFast switching speed.High performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage VDSS 60 VGate

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BSZ035N03LSG | SVF9N90F

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