KDS5670 Specs and Replacement
Type Designator: KDS5670
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 685 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOP-8
KDS5670 substitution
- MOSFET ⓘ Cross-Reference Search
KDS5670 datasheet
kds5670.pdf
SMD Type IC SMD Type IC 60V N-Channel PowerTrenchTM MOSFET KDS5670 Features 10 A, 60 V. RDS(ON) = 0.014 @VGS =10 V RDS(ON) = 0.017 @VGS =6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 60 V Gate... See More ⇒
Detailed specifications: KDS2572, KDS3512, KDS3601, KDS3912, KDS4470, KDS4501H, KDS4559, KDS4953, IRF740, KDS6375, KDS6685, KDS6910, KDS8333C, KDS8928A, KDS8958, KDS9952A, KDV303N
Keywords - KDS5670 MOSFET specs
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