All MOSFET. KDS5670 Datasheet

 

KDS5670 Datasheet and Replacement


   Type Designator: KDS5670
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 685 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP-8
 

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KDS5670 Datasheet (PDF)

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KDS5670

SMD Type ICSMD Type IC60V N-Channel PowerTrenchTM MOSFETKDS5670Features10 A, 60 V. RDS(ON) = 0.014 @VGS =10 VRDS(ON) = 0.017 @VGS =6 VLow gate chargeFast switching speed.High performance trench technology for extremely low RDS(ON)High power and current handling capabilityAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Source Voltage VDSS 60 VGate

Datasheet: KDS2572 , KDS3512 , KDS3601 , KDS3912 , KDS4470 , KDS4501H , KDS4559 , KDS4953 , IRF740 , KDS6375 , KDS6685 , KDS6910 , KDS8333C , KDS8928A , KDS8958 , KDS9952A , KDV303N .

History: IPB023N04N

Keywords - KDS5670 MOSFET datasheet

 KDS5670 cross reference
 KDS5670 equivalent finder
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