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KDS6910 Specs and Replacement

Type Designator: KDS6910

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: SOP-8

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KDS6910 datasheet

 ..1. Size:66K  kexin
 kds6910.pdf pdf_icon

KDS6910

SMD Type IC SMD Type IC Dual N-Channel Logic Level PowerTrench MOSFET KDS6910 Features 7.5A, 30V. RDS(ON) = 13m @VGS =10 V RDS(ON) = 17m @VGS =4.5V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 30 V... See More ⇒

Detailed specifications: KDS3912, KDS4470, KDS4501H, KDS4559, KDS4953, KDS5670, KDS6375, KDS6685, IRF540N, KDS8333C, KDS8928A, KDS8958, KDS9952A, KDV303N, KDW2503N, KDW2504P, KDW2521C

Keywords - KDS6910 MOSFET specs

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