KDS8958 Datasheet and Replacement
Type Designator: KDS8958
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 173 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP-8
KDS8958 substitution
KDS8958 Datasheet (PDF)
kds8958.pdf

SMD Type ICSMD Type TransistorsDual N & P-Channel PowerTrench MOSFETKDS8958FeaturesN-Channel7.0 A, 30 V RDS(ON) = 0.028 @VGS =10VRDS(ON) = 0.040 @VGS =4.5VP-Channel-5 A, -30 V RDS(ON) = 0.052 @VGS =- 10 VRDS(ON) = 0.080 @VGS =-4.5VFast switching speedHigh power and handling capability in a widelyused surface mount packageAbsolute Maximum Ratings Ta = 25Parameter Sy
kds8928a.pdf

SMD Type ICSMD Type TransistorsDual N & P-Channel EnhancementMode Field Effect TransistorKDS8928AFeaturesN-Channel5.5A, 30 V RDS(ON) = 0.030 @VGS =4.5VRDS(ON) = 0.038 @VGS =2.5VP-Channel-4 A, -20 V RDS(ON) = 0.055 @VGS =- 4.5 VRDS(ON) = 0.070 @VGS =-2.5VHigh density cell design for extremely low RDS(ON).High power and handling capability in a widelyused surface mount
Datasheet: KDS4559 , KDS4953 , KDS5670 , KDS6375 , KDS6685 , KDS6910 , KDS8333C , KDS8928A , IRF640 , KDS9952A , KDV303N , KDW2503N , KDW2504P , KDW2521C , KDW258P , KE3587-G , KF10N65F .
History: FK14KM-10 | FDC6318P | AP9962GMA | KDS6375 | APT8030LVR | FK16UM-5 | KF10N65F
Keywords - KDS8958 MOSFET datasheet
KDS8958 cross reference
KDS8958 equivalent finder
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History: FK14KM-10 | FDC6318P | AP9962GMA | KDS6375 | APT8030LVR | FK16UM-5 | KF10N65F



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