All MOSFET. KI2301BDS Datasheet

 

KI2301BDS MOSFET. Datasheet pdf. Equivalent


   Type Designator: KI2301BDS
   Marking Code: L1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-23

 KI2301BDS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KI2301BDS Datasheet (PDF)

 ..1. Size:49K  kexin
 ki2301bds.pdf

KI2301BDS KI2301BDS

SMD Type TransistorsP-Channel 2.5-V (G-S) MOSFETKI2301BDSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13Features12RoH Lead (Pb)-Free Version is RoHS Compliant.+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS -20 VGate-

 8.1. Size:848K  lge
 ki2301.pdf

KI2301BDS KI2301BDS

KI2301P-Channel 20-V(D-S) MosfetDESCRIPTION DThe KI2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)-20V64m 89 m

 8.2. Size:351K  tysemi
 ki2301ds.pdf

KI2301BDS KI2301BDS

SMD Type ICSMD Type MOSFESMD Type MOSFETSMD Type MOSFETSMD Type MOSFETProduct specification KI2301DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features VDS (V) = -20V RDS(ON) 100m (VGS = -4.5V)1 2+0.1+0.05 RDS(ON) 150m (VGS = -2.5V) 0.95-0.1 0.1-0.01+0.11.9-0.1D 1.Base1.Base1. Gate2.Emitter2.Emitter2. Source3.

 8.3. Size:322K  kexin
 ki2301t.pdf

KI2301BDS

SMD Type MOSFETP-Channel Enhancement MOSFET KI2301TSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-2.8 A1 2 RDS(ON) 115m (VGS =-4.5V)+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 160m (VGS =-2.5V)1.Gate2.Source3.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sou

 8.4. Size:185K  kexin
 si2301 ki2301.pdf

KI2301BDS KI2301BDS

SMD Type MOSFETP-Channel Enhancement MOSFET SI2301 (KI2301) Features VDS (V) =-20V RDS(ON) 130m (VGS =-4.5V)3 RDS(ON) 190m (VGS =-2.5V)12 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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