KI2306DS Datasheet. Specs and Replacement

Type Designator: KI2306DS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm

Package: SOT-23

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KI2306DS datasheet

 ..1. Size:47K  kexin
ki2306ds.pdf pdf_icon

KI2306DS

SMD Type IC SMD Type Transistors N-Channel 30-V (D-S) MOSFET KI2306DS SOT-23 Unit mm +0.1 2.9-0.1 Features +0.1 0.4-0.1 3 TrenchFET Power MOSFET 100% Rg Tested 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source vol... See More ⇒

 8.1. Size:1581K  kexin
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KI2306DS

SMD Type MOSFET IC N-Channel 30-V (D-S) MOSFET SI2306 (KI2306) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1 2 +0.02 +0.1 D 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1. Gate 2. Source S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-S... See More ⇒

 8.2. Size:1075K  kesenes
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KI2306DS

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode MOSFET KI2306 SOT-23-3 Unit mm +0.2 2.9-0.2 Features 0.4+0.1 -0.05 3 @VGS=10V RDS(ON)=0.030 RDS(ON)=0.035 @VGS=4.5V DS(ON) GS R =0.052 @V =2.5V 12 0.95+0.1 -0.1 0.1+0.05 -0.01 1.9+0.2 -0.2 D 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector G S Absolute Maximum Ratings ... See More ⇒

 9.1. Size:848K  lge
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KI2306DS

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Detailed specifications: KI2301BDS, KI2301DS, KI2302DS, KI2303BDS, KI2303DS, KI2304DS, KI2305, KI2306, 18N50, KI2307BDS, KI2307DS, KI2309DS, KI2311DS, KI2312DS, KI2314EDS, KI2315BDS, KI2319DS

Keywords - KI2306DS MOSFET specs

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