KI2314EDS MOSFET. Datasheet pdf. Equivalent
Type Designator: KI2314EDS
Marking Code: C4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45 V
|Id|ⓘ - Maximum Drain Current: 3.77 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 1.4 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SOT-23
KI2314EDS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KI2314EDS Datasheet (PDF)
ki2314eds.pdf
SMD Type TransistorsN-Channel 20-V (D-S) MOSFETKI2314EDSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesTrenchFET Power MOSFETESD Protected: 3000 V12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS 20VGate-S
ki2312.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET KI2312 Features3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V)12 RDS(ON) 40m (VGS = 2.5V) RDS(ON) 51m (VGS = 1.8V) Absolute Maximum Ratings Ta = 25 Parameter Symbo
si2312 ki2312.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET SI2312 (KI2312)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V)1 2 RDS(ON) 40m (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 51m (VGS = 1.8V)G 13 D1. Gate2. SourceS 23. Drain Abs
ki2310.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETKI2310SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 VDS=20V ID = 6 .5A RDS(on)= 22m@VGS=4.5V ,ID=6.5A1 2 RDS(on)= 30m@VGS=2.5V ,ID=5.5A +0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1G 13 D1.GateS 22.Source3.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr
ki2312ds.pdf
SMD Type TransistorsN-Channel 20 -V (D-S) MOSFETKI2312DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13Features1.8-V RatedRoHS Compliant12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8
ki2319ds.pdf
SMD Type ICSMD Type TransistorsP-Channel 40-V (D-S) MOSFETKI2319DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3TrenchFET Power MOSFET12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS -40 VGate-Source Volta
ki2310ds.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETKI2310DSSOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V ID = 6 .5A RDS(on)= 22m@VGS=4.5V ,ID=6.5A1 2+0.02+0.1 RDS(on)= 30m@VGS=2.5V ,ID=5.5A 0.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rati
ki2311ds.pdf
SMD Type TransistorsP-Channel 1.8-V (G-S) MOSFETKI2311DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3TrenchFET Power MOSFETS12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS -8VGate-Source Voltage VGS 8C
ki2315bds.pdf
SMD Type ICSMD Type TransistorsP-Channel 1.8-V (G-S) MOSFETKI2315BDSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features312+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS -12 VGate-Source Voltage VGS 8 VContinuous
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NCEP60ND60G | FCP110N65F
History: NCEP60ND60G | FCP110N65F
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