PHB11N50E Datasheet. Specs and Replacement

Type Designator: PHB11N50E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Id| ⓘ - Maximum Drain Current: 10.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: SOT404

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PHB11N50E substitution

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PHB11N50E datasheet

 ..1. Size:35K  philips
 php11n50e phb11n50e phw11n50e.pdf pdf_icon

PHB11N50E

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 A g Low thermal resistance RDS(ON) 0.6 s GENERAL DESCRIPTI... See More ⇒

 ..2. Size:102K  philips
 phb11n50e phw11n50e 1.pdf pdf_icon

PHB11N50E

Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.9 A g Low thermal resistance RDS(ON) 0.55 s GENERAL DESCRIPTION N-channel,... See More ⇒

 8.1. Size:113K  philips
 phb11n06lt.pdf pdf_icon

PHB11N50E

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatible RDS(ON) 150 m (VGS = 5 V) g RDS(ON) 130 m (VGS = 10 V) s GENERAL DESCRIPT... See More ⇒

 8.2. Size:114K  philips
 phb11n06lt phd11n06lt php11n06lt 3.pdf pdf_icon

PHB11N50E

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatible RDS(ON) 150 m (VGS = 5 V) g RDS(ON) 130 m (VGS = 10 V) s GENERAL DESCRIPT... See More ⇒

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Detailed specifications: OM11N55SA, OM11N60SA, OM1N100SA, OM1N100ST, OM3N100SA, OM3N100ST, OM5N100SA, OM6N100SA, IRF3710, PHB125N06LT, PHB130N03LT, PHB21N06LT, PHB24N03LT, PHB2N50E, PHB2N60E, PHB37N06LT, PHB3N40E

Keywords - PHB11N50E MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.