KI4511DY MOSFET. Datasheet pdf. Equivalent
Type Designator: KI4511DY
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
|Id|ⓘ - Maximum Drain Current: 7.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.5 nC
trⓘ - Rise Time: 12 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
Package: SOP-8
KI4511DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KI4511DY Datasheet (PDF)
ki4511dy.pdf
SMD Type ICSMD Type TransistorsN- and P-Channel 20-V (D-S) MOSFETKI4511DYFeaturesTrenchFET Power MOSFETAbsolute Maximum Ratings TA =25N-Channel P-ChannelParameter Symbol Unit10 sec Steady State 10 sec Steady StateDrain-Source Voltage VDS 20 -20 VGate-Source Voltage VGS 16 12 VContinuous Drain Current (TJ = 150 )* TA =25 9.6 7.2 -6.2 -4.6 AIDTA =70 7.7 5.8 -4.9 -3.7 A
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: BRCS080N02RA | BUZ80
History: BRCS080N02RA | BUZ80
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