All MOSFET. KI4920DY Datasheet

 

KI4920DY Datasheet and Replacement


   Type Designator: KI4920DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP-8
 

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KI4920DY Datasheet (PDF)

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KI4920DY

SMD Type ICSMD Type ICDual N-Channel 30-V (D-S) MOSFETKI4920DYFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 20Continuous Drain Current (TJ = 150 )* TA =25 ID 6.9ATA =70 5.5Pulsed Drain Current IDM 40Continuous Source Current (Diode Conduction) * IS 1.7 ATA =25 2Maximum Power Dissipation * P

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KI4920DY

SMD Type ICSMD Type ICDual P-Channel 30-V (D-S) MOSFETKI4923DYFeaturesTrenchFET Power MOSFETSAdvanced High Cell Density Process1: Source 13: Source 22: Gate 1 4: Gate 27,8: Drain 1 5,6: Drain 2Absolute Maximum Ratings Ta = 25Parameter Symbol 10 secs Steady State UnitDrain-Source Voltage VDS -30VGate-Source Voltage VGS 20TA =25 -8.3 -6.2Continuous Drain Current

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BSC032N03SG

Keywords - KI4920DY MOSFET datasheet

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