All MOSFET. KI4980DY Datasheet

 

KI4980DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: KI4980DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOP-8

 KI4980DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KI4980DY Datasheet (PDF)

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 ki4980dy.pdf

KI4980DY KI4980DY

SMD Type ICSMD Type ICDual N-Channel 80-V (D-S) MOSFETKI4980DYFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 80VGate-Source Voltage VGS 20Continuous Drain Current (TJ = 150 )* TA =25 3.7IDTA =70 2.9 APulsed Drain Current IDM 30Continuous Source Current (Diode Conduction) * IS 1.7 ATA =25 2.0Maximum Power Dissipation *

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