KI5935DC MOSFET. Datasheet pdf. Equivalent
Type Designator: KI5935DC
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.1 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 5.5 nC
Rise Time (tr): 32 nS
Maximum Drain-Source On-State Resistance (Rds): 0.086 Ohm
Package: ChipFET
KI5935DC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KI5935DC Datasheet (PDF)
1.1. ki5935dc.pdf 
Size:66K _update_mosfet
SMD Type IC SMD Type IC Dual P-Channel 1.8-V (G-S) MOSFET KI5935DC Features TrenchFET Power MOSFETS Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 TA =25 -4.1 -3.0 Continuous Drain Current (TJ = 150 ) * ID TA =85 -2.9 -2.2 A P
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