KI6968BEDQ MOSFET. Datasheet pdf. Equivalent
Type Designator: KI6968BEDQ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.6 V
Maximum Drain Current |Id|: 5.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12 nC
Rise Time (tr): 330 nS
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: TSSOP-8
KI6968BEDQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KI6968BEDQ Datasheet (PDF)
1.1. ki6968bedq.pdf 
Size:52K _update_mosfet
SMD Type IC SMD Type MOSFET Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection KI6968BEDQ(SI6968BEDQ) TSSOP-8 Unit: mm Features VDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5A VDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5A N-Channel N-Channel * Typical value by design Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Sou
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