All MOSFET. KMB075N75P Datasheet


KMB075N75P MOSFET. Datasheet pdf. Equivalent

Type Designator: KMB075N75P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 85 nC

Rise Time (tr): 300 nS

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm

Package: TO-220AB

KMB075N75P Transistor Equivalent Substitute - MOSFET Cross-Reference Search


KMB075N75P Datasheet (PDF)

1.1. kmb075n75p.pdf Size:430K _update_mosfet


KMB075N75P SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ + correction , electronic lamp ballasts based o

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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